Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: INT-A-PAK53641+$1124.361710+$1114.140225+$1109.029550+$1103.9188100+$1098.8080150+$1093.6973250+$1088.5866500+$1083.4758 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1.2kV 22A 28Pin EMIPAK-2B PressFit97931+$597.097810+$576.147050+$573.5282100+$570.9093150+$566.7191250+$563.0528500+$559.38641000+$555.1962 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 8.8A 13Pin IMS-224681+$376.975810+$367.141650+$359.6021100+$356.9796200+$355.0128500+$352.39041000+$350.75142000+$349.1123 -
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Category: IGBTtransistorDescription: INT-A-PAK89091+$3584.562310+$3551.975425+$3535.681950+$3519.3884100+$3503.0950150+$3486.8015250+$3470.5080500+$3454.2146 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 380A 4Pin SOT-22784241+$158.299810+$154.170250+$151.0042100+$149.9030200+$149.0771500+$147.97591000+$147.28762000+$146.5994 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 650V 221A 7Pin INT-A-PAK13131+$830.055710+$800.930950+$797.2903100+$793.6497150+$787.8248250+$782.7279500+$777.63111000+$771.8061 -
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Category: IGBTtransistorDescription: INT-A-PAK65851+$3066.541510+$3038.663925+$3024.725050+$3010.7862100+$2996.8474150+$2982.9086250+$2968.9697500+$2955.0309 -
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Category: IGBTtransistorDescription: VISHAY VS-GT100TP60N IGBT Array & Module Transistor, Dual N Channel, 160A, 1.65V, 417W, 600V, INT-A-PAK45081+$1430.744710+$1417.737925+$1411.234550+$1404.7312100+$1398.2278150+$1391.7244250+$1385.2210500+$1378.7176 -
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Category: IGBTtransistorDescription: “Full Bridge IGBT MTP (via high-speed IGBT), 50 A Full Bridge IGBT MTP (Warp Speed IGBT), 50 A36611+$299.779710+$291.959450+$285.9638100+$283.8783200+$282.3143500+$280.22891000+$278.92552000+$277.6221 -
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Category: IGBTtransistorDescription: VISHAY VS-GB50LA120UX Single transistor, IGBT, 84 A, 3.22 V, 431 W, 1.2 kV, SOT-227, 4-pin53161+$252.977010+$246.377650+$241.3181100+$239.5582200+$238.2383500+$236.47851000+$235.37862000+$234.2787 -
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Category: IGBTtransistorDescription: INT-A-PAK86631+$2580.237010+$2556.780325+$2545.052050+$2533.3236100+$2521.5953150+$2509.8669250+$2498.1386500+$2486.4102 -
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Category: IGBTtransistorDescription: INT-A-PAK83731+$3121.674610+$3093.295725+$3079.106350+$3064.9169100+$3050.7275150+$3036.5380250+$3022.3486500+$3008.1592 -
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Category: IGBTtransistorDescription: VISHAY CPV364M4F IGBT Array & Module Transistor, N Channel, 27A, 600V, 63W, 600V, Module44171+$345.132310+$336.128850+$329.2262100+$326.8252200+$325.0245500+$322.62361000+$321.12312000+$319.6225 -
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Category: IGBTtransistorDescription: IGBT 600V 480A 830W INT-A-PAK84101+$912.259910+$880.250850+$876.2497100+$872.2485150+$865.8467250+$860.2451500+$854.64351000+$848.2417 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.94461+$1471.589910+$1458.211825+$1451.522850+$1444.8337100+$1438.1447150+$1431.4556250+$1424.7666500+$1418.0775 -
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Category: IGBTtransistorDescription: VISHAY VS-GA100TS60SFPBF IGBT Array & Module Transistor, NPN, 220A, 1.39V, 780W, 600V, INT-A-PAK64611+$815.942510+$787.312950+$783.7342100+$780.1555150+$774.4296250+$769.4194500+$764.40931000+$758.6833 -
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Category: IGBTtransistorDescription: VISHAY VS-GB50NA120UX Single transistor, IGBT, 84 A, 3.22 V, 431 W, 1.2 kV, SOT-227, 4-pin18431+$277.038510+$269.811450+$264.2706100+$262.3434200+$260.8979500+$258.97071000+$257.76622000+$256.5617 -
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Category: IGBTtransistorDescription: VISHAY VS-GB70LA60UF Single transistor, IGBT, 111 A, 2.23 V, 447 W, 600 V, SOT-227, 4-pin93551+$156.677210+$152.589950+$149.4564100+$148.3664200+$147.5490500+$146.45911000+$145.77792000+$145.0967 -
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Category: IGBTtransistorDescription: Insulated gate bipolar transistor (ultra fast speed) IGBT ） ， 100 A Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A79481+$257.876010+$251.148850+$245.9913100+$244.1974200+$242.8519500+$241.05801000+$239.93682000+$238.8156 -
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Category: IGBTtransistorDescription: Insulated Gate Bipolar Transistor Ultra Low VCE (on), 342 Insulated Gate Bipolar Transistor Ultra Low VCE (on), 342 A7432 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.65601+$1171.061110+$1160.415125+$1155.092150+$1149.7691100+$1144.4461150+$1139.1231250+$1133.8001500+$1128.4771 -
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Category: IGBTtransistorDescription: IGBT SIPModule (Fast IGBT) IGBT SIP Module (Fast IGBT)56961+$135.414810+$131.882250+$129.1739100+$128.2319200+$127.5254500+$126.58341000+$125.99462000+$125.4059 -
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Category: IGBTtransistorDescription: VISHAY CPV362M4U IGBT Array & Module Transistor, N Channel, 7.2A, 600V, 23W, 600V, Module50561+$275.681510+$268.489850+$262.9761100+$261.0583200+$259.6200500+$257.70221000+$256.50362000+$255.3050 -
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Category: IGBTtransistorDescription: TRANS IGBT MOD N-CH 600V 27A 13Pin IMS-278291+$468.626210+$456.401150+$447.0286100+$443.7686200+$441.3236500+$438.06361000+$436.02612000+$433.9886 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 8.8A 13Pin IMS-238681+$268.859710+$261.845950+$256.4687100+$254.5984200+$253.1957500+$251.32531000+$250.15642000+$248.9874 -
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Category: IGBTtransistorDescription: VISHAY VS-EMF050J60U Transistor, IGBT array&module, NPN, 88 A, 1.8 V, 338 W, 600 V, Module84681+$479.692610+$467.178950+$457.5850100+$454.2480200+$451.7453500+$448.40831000+$446.32272000+$444.2371 -
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Category: IGBTtransistorDescription: INT-A-PAK11721+$2856.683510+$2830.713725+$2817.728750+$2804.7438100+$2791.7589150+$2778.7740250+$2765.7890500+$2752.8041 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.57221+$354.418510+$345.172850+$338.0844100+$335.6189200+$333.7698500+$331.30431000+$329.76332000+$328.2224
